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| PD - 94921 IRG4PC30KPBF INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC30K and IRGPC30M devices Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 28 16 58 58 10 20 260 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.24 6 (0.21) Max. 1.2 40 Units C/W g (oz) www.irf.com 1 12/30/03 IRG4PC30KPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage 0.54 V/C VGE = 0V, IC = 1.0mA 2.21 IC = 14A 2.21 2.7 IC = 16A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage V 2.88 IC = 28A See Fig.2, 5 2.36 IC = 16A , TJ = 150C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250A DV GE(th)/DTJ Temperature Coeff. of Threshold Voltage -12 mV/C VCE = VGE, IC = 250A gfe Forward Transconductance 5.4 8.1 S VCE = 100V, IC = 16A 250 VGE = 0V, VCE = 600V V(BR)CES V(BR)ECS ICES IGES Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current 2.0 1100 100 A nA VGE = 0V, VCE = 10V, TJ = 25C VGE = 0V, VCE = 600V, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t sc t d(on) tr t d(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. Max. Units Conditions 67 100 IC = 16A 11 16 nC VCC = 400V See Fig.8 25 37 VGE = 15V 26 28 TJ = 25C ns 130 200 IC = 16A, VCC = 480V 120 170 VGE = 15V, RG = 23 0.36 Energy losses include "tail" 0.51 mJ See Fig. 9,10,14 0.87 1.3 s VCC = 400V, TJ = 125C VGE = 15V, RG = 23 , VCPK < 500V 25 TJ = 150C, 29 IC = 16A, VCC = 480V ns 190 VGE = 15V, RG = 23 190 Energy losses include "tail" 1.2 mJ See Fig. 11,14 0.26 TJ = 25C, VGE = 15V, RG = 23 0.36 IC = 14A, VCC = 480V 0.62 Energy losses include "tail" 13 nH Measured 5mm from package 920 VGE = 0V 110 pF VCC = 30V See Fig. 7 27 = 1.0MHz Details of note through are on the last page 2 www.irf.com IRG4PC30KPBF 40 For both: 35 30 25 Square wave: 20 15 I Triangular wave: I Load Current ( A ) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 24W Clamp voltage: 80% of rated 60% of rated voltage 10 5 0 0.1 1 10 Ideal diodes A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 150 o C 10 I C, Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 oC 10 TJ = 25 oC 1 1 0.1 V GE = 15V 20s PULSE WIDTH 1 10 0.1 V CC = 50V 5s PULSE WIDTH 5 10 15 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC30KPBF 30 4.0 25 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 32 A Maximum DC Collector Current(A) 20 3.0 15 IC = 16 A 2.0 10 IC = 8.0A 8A 5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) , Junction Temperature ( ) C) TTJ Junction Temperature ( C J, Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30KPBF 1500 1200 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 16A 16 C, Capacitance (pF) 900 Cies 12 600 8 300 Coes Cres 4 0 1 10 0 VCE , Collector-to-Emitter Voltage (V) 0 20 40 60 80 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.5 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 16A 10 RG = Ohm 23 VGE = 15V VCC = 480V IC = 32 A IC = 16 A 1 1.0 IC = 8.0A 8A 0.5 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC30KPBF 4.0 2.4 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 3.2 VGE = 23 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 1.6 0.8 0.0 0 8 16 24 32 40 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC30KPBF L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X I C@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4PC30KPBF Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See fig. 13a) Repetitive rating; pulse width limited by maximum Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. junction temperature. TO-247AC Package Outline 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A- Dimensions are shown in millimeters (inches) -D5.30 (.209) 4.70 (.185) 0.25 (.010) M D B M 5.50 (.217) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 12 - Drain GATE2 - Collector 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 8 www.irf.com |
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